Silicon parts joined by a silicon layer preferably plasma sprayed

ABSTRACT

A method of joining two silicon members and the bonded assembly in which the members are assembled to place them into alignment across a seam. Silicon derived from silicon powder is plasma sprayed across the seam and forms a silicon coating that bonds to the silicon members on each side of the seam to thereby bond together the members. The plasma sprayed silicon may seal an underlying bond of spin-on glass or may act as the primary bond, in which case through mortise holes are preferred so that two layers of silicon are plasma sprayed on opposing ends of the mortise holes. A silicon wafer tower or boat may be the final product. The method may be used to form a ring or a tube from segments or staves arranged in a circle. Plasma spraying silicon may repair a crack or chip formed in a silicon member.

RELATED APPLICATION

This application is a division of Ser. No. 10/602,299, filed Jun. 24,2003 and now issued as U.S. Pat. No. 7,074,693.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The invention relates generally to plasma spraying. In particular, theinvention relates to joining silicon parts used in semiconductorfabrication equipment.

2. Background Art

Batch substrate processing continues to be used in fabricatingsemiconductor integrated circuits and similar micro structural arrays.In batch processing, many silicon wafers or other types of substratesare placed together on a wafer support fixture in a processing chamberand simultaneously processed. Currently most batch processing includesextended exposure to high temperature, for example, in depositing planarlayers of oxide or nitride or annealing previously deposited layers ordopants implanted into existing layers. Although horizontally arrangedwafer boats were originally used, vertically arranged wafer towers arenow mostly used as the support fixture to support many wafers one abovethe other.

In the past, the towers and boats have been most often made of quartz orsometimes of silicon carbide for high-temperature applications. However,quartz and silicon carbide have proven unsatisfactory for many advancedprocesses. An acceptable yield of advanced integrated circuits dependsupon a very low level of particles and metallic contaminants in theprocessing environment. Often the quartz towers develop excessiveparticles after a few cycles and must be reconditioned or discarded.Furthermore, many processes require high-temperature processing at above1000° C. or even above 1250° C. Quartz sags at these high temperaturesalthough silicon carbide maintains its strength to a much highertemperature. However, for both materials the high temperature activatesthe diffusion of impurities from the quartz or silicon carbide into thesemiconductor silicon. Some of the problems with silicon carbide havebeen solved by coating the sintered SiC with a thin SiC surface coatingdeposited by chemical vapor deposition (CVD), which seals thecontaminants in the underlying sintered silicon carbide. This approach,despite its expense, has its own problems. Integrated circuits havingfeatures sizes of 0.13 μm and below often fail because slip defectsdevelop in the silicon wafer. It is believed that slip develops duringinitial thermal processing when the silicon wafers are supported ontowers of a material having a different thermal expansion than silicon.

Many of these problems have been solved by the use of silicon towers,particularly those made of virgin polysilicon, as described by Boyle etal. in U.S. Pat. No. 6,450,346, incorporated herein by reference in itsentirety. A silicon tower 10, illustrated orthographically in FIG. 1,includes three or more silicon legs 12 joined at their ends to twosilicon bases 14. Each leg 12 is cut with slots to form inwardlyprojecting teeth 16 which slope upwards by a few degrees and havehorizontal support surfaces 18 formed near their inner tips 20. Aplurality of wafers 22, only one of which is illustrated, are supportedon the support surfaces 18 in parallel horizontal orientation along theaxis of the tower 10. For very high-temperature processing, it ispreferred that there be four legs 12 and that the support surfaces 18 bearranged in a square pattern at 0.707 of the wafer radius from thecenter. A boat has much the same structure but with both basesconfigured on one side to support the horizontally arranged boat. Thewafers are supported a few degrees from vertical both at the bottom ofthe slots and the tips of the teeth.

Many of these problems have been solved by the use of silicon towers,particularly those made of virgin polysilicon, as described by Boyle etal. in U.S. Pat. No. 6,450,346, incorporated herein by reference in itsentirety. A silicon tower 10, illustrated orthographically in FIG. 1,includes three or more silicon legs 12 joined at their ends to twosilicon bases 14. Each leg 12 is cut with slots to form inwardlyprojecting teeth 16 which slope upwards by a few degrees and havehorizontal support surfaces 18 formed near their inner tips 20. Aplurality of wafers 22, only one of which is illustrated, are supportedon the support surfaces 18 in parallel horizontal orientation along theaxis of the tower 10. For very high-temperature processing, it ispreferred that there be four legs 12 and that the support surfaces 18 bearranged in a square pattern at 0.707 of the wafer radius from thecenter. A boat has much the same structure but with both basesconfigured on one side to support the horizontal arranged boat. Thewafers are supported a few degrees from vertical both at the bottom ofthe slots and the tips of the teeth.

Superior results are obtained if the legs 12 are machined from virginpolysilicon (virgin poly), which is bulk silicon formed by chemicalvapor deposition with silane (SiH₄) or a chlorosilane (SiClH₃, SiCl₂H₂,SiCl₃H, or SiCl₄) as the precursor. Virgin poly is the precursormaterial formed in multi-centimeter ingots, which is used for theCzochralski growth of silicon ingots from which wafers are cut. It hasan exceedingly low level of impurities. Although virgin poly would bethe preferred material for the bases 14, it is not usually available insuch large sizes. Czochralski silicon may be used for the bases 14. Itshigher impurity level is of lesser importance since the bases 14 do notcontact the wafers 22.

Fabricating a silicon tower or boat, particularly out of virgin poly,requires several separate steps, one of which is joining the machinedlegs 12 to the bases 14. As schematically illustrated in FIG. 2, blindmortise holes 24 are machined into each base 14 with non-circular shapesin correspondence with and only slightly larger than ends 26 of the legs12. Boyle et al. favor the use of a spin-on glass (SOG) that has beenthinned with an alcohol or the like. The SOG is applied to one or bothof the members in the area to the joined. The members are assembled andthen annealed at 600° C. or above to vitrify the SOG in the seam betweenthe members.

SOG is widely used in the semiconductor industry for forming thininter-layer dielectric layers so that it is relatively inexpensive andof fairly high purity. SOG is a generic term for chemicals widely usedin semiconductor fabrication to form silicate glass layers on integratedcircuits. Commercial suppliers include Allied Signal, Filmtronics ofButler, Pa., and Dow Corning. SOG precursors include one or morechemicals containing both silicon and oxygen as well as hydrogen andpossibly other constituents. An example of such as precursor istetraethylorthosilicate (TEOS) or its modifications or an organo-silanesuch as siloxane or silsesquioxane. In this use, it is preferred thatthe SOG not contain boron or phosphorous, as is sometimes done forintegrated circuits. The silicon and oxygen containing chemical isdissolved in an evaporable carrier, such as an alcohol, methyl isobutylketone, or a volatile methyl siloxane blend. The SOG precursor acts as asilica bridging agent in that the precursor chemically reacts,particularly at elevated temperature, to form a silica network havingthe approximate composition of SiO₂.

Boyle has disclosed an improvement of the SOG joining method in U.S.provisional application Ser. No. 60/465,021, filed Apr. 23, 2003 andincorporated herein by reference in its entirety. In this method siliconpowder is added to the liquid SOG precursor to form a slurry. Terpineolalcohol is added to slow the setting time. The powder preferably has aparticle size of between 1 and 50 μm and is prepared from virginpolysilicon. The slurry adhesive is applied to the joint before assemblyand is cured similarly to the pure SOG adhesive to form asilica/polysilicon matrix with the polysilicon fraction being typically85% or greater. The improved SOG/polysilicon adhesive is believed to bestronger than the pure SOG adhesive and contains a significantly lowerfraction of silica originating from the SOG, thereby reducing thecontamination problem. Nonetheless, a certain amount of silica remains,thereby reducing but not eliminating contamination and the tendency ofthe joint to dissolve in HF.

Two silicon members to be joined are separated by a gap having athickness of about 50 μm (2 mils). The thickness of the gap representsan average separation of the leg 12 and the base 14 as the end 26 of theleg 12 is at least slidably fit in the mortise hole 24. The gapthickness cannot easily be further reduced because of the machiningrequired to form the complex shapes and because some looseness ofassembled members is needed to allow precise alignment of the supportsurfaces and other parts. A coating of the liquid SOG precursor or theSOG/silicon-powder mixture is applied to at least one of the matingsurfaces before the two members 12, 14 are assembled such that the SOGprecursor with optional silicon powder fills the gap 34 of FIG. 3.Following curing and a vitrification anneal at a temperature typicallyabove 600° C., the SOG precursor with optional silicon powder changesinto a solid having the structure of a silicate glass in athree-dimensional network of silicon and oxygen atoms and their bondsand optionally forming a matrix for the larger fraction of the embeddedsilicon crystallites.

Silicon towers and boats produced by this method have provided superiorperformance in several applications. Nonetheless, it is possible thatthe bonded structure and in particular the bonding material may still becontaminated. The very high temperatures experienced in the use orcleaning of the silicon towers, sometimes above 1300° C., may worsen thecontamination. One possible source of the contaminants is the relativelylarge amount of SOG used to fill the joint between the members to bejoined. Siloxane SOG typically used in semiconductor fabrication iscured at around 400° C. and the resultant glass is not usually exposedto high-temperature chlorine. However, it is possible, though the effecthas not been verified, that the very high temperature draws out the fewbut possibly still significant number of contaminants in the SOG. TheSOG/silicon mixture reduces the amount of SOG but does not eliminate it.

Some integrated circuit fabrication facilities require periodic cleaningof towers in hydrofluoric acid (HF). Silica, however, tends to be etchedby HF so that SOG-bonded towers may come apart after HF cleaning.

Silicon towers need to be assembled with alignment tolerances oftypically of the order of 25 μm in order to support wafers withoutrocking. Large mechanical jigs are used to align the members of anassembled towers before the bonding between the members is completed. ASOG adhesive presents two fabricational difficulties in maintaining thealignment. Typically the spin-on partially hardens or cures at roomtemperature in less than an hour. The hardening time can be lengthenedsomewhat by diluting the commercially available SOG precursor withalcohol or the like. Nonetheless, only about an hour is available toapply the SOG to the joining members, to assemble the members, and toalign the members in the jig. While such quick fabrication is possible,it leaves little room for error or unexpected delays and impacts workscheduling. Furthermore, the alignment should be maintained during thefinal curing of the spin-on glass at 600° C. and typically even higherat 1200° C. As a result, the alignment jig should support the tower inthe annealing furnace. Therefore, either the alignment is performed in acooled furnace, which is thereafter raised to the curing temperature, orthe jig and its supported assembled tower is inserted into a furnace,which may be kept at a somewhat elevated temperature. Again, placing thejig with its supported tower into an annealing furnace is possible, butsuch a process is inconvenient and slows throughput.

In U.S. Pat. No. 6,284,997, Zehavi et al. have disclosed a method ofwelding together silicon members, thereby avoiding the use of SOG and ora SOG/silicon mixture and their potential drawbacks. However, Zehavi etal. teach that cracks can be avoiding in welding silicon only bypre-heating the silicon members to at least 600° C. before the weldingstep heats the localized area of the weld seam to above the meltingpoint of silicon, 1416° C. The welding method has proven successful atproducing crack-free welds essentially free of contamination. However,welding 600° C. members is a difficult and unpleasant process.Furthermore, the 600° C. pre-heating needs to be performed with themembers held in the alignment jig. So again, silicon welding is possiblebut has its drawbacks.

Siemens et al. in U.S. Pat. No. 5,070,228 disclose the use of plasmaspraying to join parts composed of a limited number of specifiedreactive metals. The method has limited applicability to complexstructures and requires pre-heating the parts in a non-reactiveenvironment using a complex apparatus.

SUMMARY OF THE INVENTION

Two silicon parts, particularly silicon structural members, may bejoined by plasma spraying silicon or otherwise depositing drops ofliquid silicon or silicon vapor to the seam between the assembled parts.The sprayed silicon coating bonds the two silicon members together.

Plasma spraying may include injecting silicon powder into a gaseousplasma and directing the gas flow to the seam.

The method may be applied to the fabrication of many types of siliconstructures including rings and tubes. It is especially advantageous infabricating a tower formed from silicon bases and silicon legs withteeth for supporting multiple wafers.

Bevels may be cut into one or both members adjacent the seam. The bevelsmay be in the form of conical chamfers.

Spin-on glass (SOG) or a mixture of SOG and silicon powder, after beingannealed to form a silicate glass, may be used as the primary adhesivebetween the members, in which case the sprayed on silicon seals theunderlying spin-on glass. Other primary adhesives may be substituted.

A first member may be placed into a mortise hole formed in the secondmember, thereby typically forming principle surfaces of the two membersthat are perpendicular at the seam. The mortise hole may be blind. Morepreferably, the mortise hole extends though the second member, andsilicon layers are plasma sprayed at both ends of the mortise hole tobond the two members together at locations space apart along the axis ofthe first member.

Small silicon tacks may be plasma sprayed to temporarily bond the piecestogether to allow the removal of the structure from an alignment jigprior to final plasma spraying of a complete bonding layer or forannealing of a spin-on glass adhesive.

Cracks in silicon can be repaired by plasma spraying silicon into thecrack, preferably after the crack has been machined into a more regularshape.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an orthographic view of a silicon wafer tower.

FIG. 2 is an orthographic view of two members of the tower and how theyare joined.

FIG. 3 is a cross-sectional view of chamfered blind mortise hole in asilicon base.

FIG. 4 is a cross-sectional view showing a silicon leg inserted into themortise hole of FIG. 3.

FIG. 5 is a cross-sectional view showing plasma sprayed silicon layer tobond the leg to the base.

FIG. 6 is partially sectioned plan view corresponding to FIG. 5.

FIG. 7 is a cross-sectional view showing the silicon layer to besmoothed around the joint.

FIG. 8 is a cross-sectional view showing a silicon tack temporarilyjoining the silicon leg and base.

FIG. 9 is a cross-sectional view showing the tack covered with theplasma sprayed silicon layer.

FIG. 10 is a cross-sectional view showing a chamfered through mortisehole in the silicon base.

FIG. 11 is a cross-sectional view showing the silicon leg insertedthrough the mortise hole.

FIG. 12 is a cross-sectional view showing two plasma sprayed siliconlayers bonding the leg to the based.

FIG. 13 is a cross-sectional view showing final grinding to smooth thesilicon joint.

FIG. 14 is a cross-sectional view of a conventional shadow ring.

FIG. 15 is a cross-sectional view of a singly chamfered silicon segmentused to form a ring.

FIG. 16 is a cross-sectional view of a doubly chamfered silicon segmentalternatively used to form the ring.

FIG. 17 is a plan view of two segments of FIG. 15 when abutted to formthe ring.

FIG. 18 is a outwardly radial elevation corresponding to FIG. 17.

FIGS. 19 and 20 are a plan view and elevation respectively correspondingto FIGS. 17 and 18 after the joint has been bonded with two plasmasprayed silicon layers.

FIG. 21 is a plan view of the boned polygonal circle of the bondedsegments of FIGS. 17 and 18.

FIG. 22 is a plan view of an axial end of a silicon stave used to form asilicon tube.

FIG. 23 is a plan view showing two silicon staves of FIG. 22 abutted toform a ring.

FIG. 24 is a outwardly radial elevation corresponding to FIG. 23.

FIGS. 25 and 26 are a plan view and an elevation corresponding to FIGS.23 and 24 showing two plasma sprayed silicon layers joining the twoadjacent staves.

FIG. 27 is a plan view of an axial end of polygonal ring of bondedsilicon staves.

FIG. 28 is an orthographic view of a crack in a silicon member.

FIG. 29 is an orthographic view of a the crack of FIG. 28 after beingmachined to a larger more regular shape.

FIG. 30 is an orthographic view of a plasma sprayed silicon layerfilling the crack.

FIG. 31 is an orthographic view of the silicon layer of FIG. 30 afterbeing ground smooth.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Plasma spraying silicon across the seam separating two juxtaposedsilicon parts has been demonstrated to form a silicon layer stronglybonded to both parts even when the parts are held at a temperaturesignificantly below the melting point of silicon during bonding. Thesprayed silicon coating may be used to seal an underlying adhesive, forexample, of spin-on glass (SOG) or SOG/silicon mixture, or the sprayedsilicon coating may be used as the primary bond between the parts.Alternatively, a silicon layer sprayed onto a smaller area of the jointmay be used as a tack similar to a tack or spot weld to temporarily holdthe two parts together.

Although the invention may be applied to other silicon parts andstructures, the following discussion will use the example of siliconwafer towers. The process for joining the parts of a silicon boat isvery similar. Such structures are formed from silicon structural memberscomposed in large part of silicon, which provides the principalmechanical support for the structure. Prior to assembly and joining thesilicon members are free standing. As shown in the cross-sectional viewof FIG. 3, a blind mortise hole 30, typically of non-circular shape, ismachined part way into a silicon base 32. However, a chamfer 34 ismachined into the base 32 at the top of the hole 30. The chamfer 34preferably has an angle with respect to the top surface of the base 32of between 20° and 60°, and 45° is a satisfactory compromise. Althoughother shapes of bevels may be used instead of the conical bevel of achamfer to relieve the two members adjacent the seam, a straight chamferis usually satisfactory. The same structure is formed for all mortiseholes in both bases of the tower.

The tower is then assembled with each end of a leg 36 fitted into therespective mortise hole 30, as illustrated in the cross-sectional viewof FIG. 4. The end of the leg 36 is slightly smaller than the mortisehole 30 to form a gap 38 that allows easy insertion and limitedflexibility for alignment. The gap 38, which is typically about 50 to100 μm, is illustrated out of scale with the leg 36. After the leg 36and base 32 have been aligned, its shape is less regular to accommodatethe alignment. The illustration shows the leg 36 nearly filling thebottom of the mortise hole 30, but a larger space may be left there ifdesired.

In one embodiment, the liquid SOG precursor or the slurry of SOG andsilicon powder is applied prior to assembly to one or both of the partsto be joined to form, as illustrated in the cross-sectional view of FIG.5, an adhesive region 40 between the assembled parts. After assembly, analignment jig aligns the tower to the tolerances of about 25 to 50 μmrequired for wafer support towers. After the tower has been aligned, thetower and jig are moved to an annealing furnace to cure the SOG in theadhesive region 40 at temperatures of up to about 1300° C. Otheradhesives and curing processes may be substituted if the adhesive isproperly sealed by the plasma sprayed silicon. Alternatively, the toweris aligned to a jig inside the cooled furnace, and thereafter thefurnace is raised to the required annealing temperature.

After adhesive curing, the bonded and rigid tower is removed from thefurnace and the jig. The portions of the leg 36 and base 32 away fromthe joint are masked, for example, by molydenum foil. Low-temperatureplasma spraying of silicon is then performed to deposit a relativelythick layer 44 of silicon, also illustrated in the plan view of FIG. 6,which fills the chamfer 34 and contacts both the planar principalsurface of the base 32 and the cylindrical, usually non-circular,principal surface of the leg 36. These two principal surfaces areperpendicular to each other. The thickness of the silicon layer 44 ispreferably at least 1/32″ (0.8 mm) although thinner layers may be usedin some situations. Optionally, as illustrated in the cross-sectionalview of FIG. 7, the silicon layer 44 may be finish ground to form asmoothly shaped collar 46 which barely protrudes above the chamfer 34.

The silicon layer 44 or the reduced collar 46 serves two purposes. Itprovides additional mechanical strength to the joint and also seals theadhesive 40 below the silicon. Although it is not essential to theinvention, the chamfer or bevel 34 is useful in increasing themechanical strength and depressing the adhesive from the final surface.

In a second embodiment of the invention, the adhesive is applied to theareas to be joined, and the tower is assembled and jigged. However,prior to the adhesive anneal with the tower still aligned in the jig, asillustrated in the cross-sectional view of FIG. 8, a small tack 48 ofsilicon is plasma sprayed into a small angular portion of the chamfer34. The tack 48 operates similarly to a tack or spot weld in forming asmall-area contact between the base 32 and leg 36 to temporarily bondthe two together. A plasma-sprayed tack similarly joins each end of eachleg 36 to its respective base 32. The tacks 48 provide sufficientmechanical strength to keep the tower in alignment after removal fromthe jig if care is taken to not shock the tower. The unjigged but joinedtower is moved to the annealing furnace for the adhesive anneal. Thetower is then removed from the furnace, its joints are masked, and thesilicon layer 44, illustrated in the cross-sectional view of FIG. 8, isplasma sprayed to completely fill the chamfer 34. This embodimenteliminates the need to jig the tower inside the annealing furnace.

In a third embodiment, no adhesive is used, but the sprayed siliconlayer provides the principal bond for the joint. If desired, the tackmay be plasma sprayed with the structure in the alignment jig and thefinal plasma spraying is performed with the structure removed from thejig. With the blind mortise hole, the silicon layer 44 is sprayed ononly a relatively narrow axial extent of the leg 36. As a result, themechanical strength of the joint is reduced. This may be insufficientfor wafer towers, but for other silicon structures subject to much lessimpact the limited bonding area may provide sufficient strength.

Plasma spraying may be used with a through mortise hole to provide astrong joint without the need for an adhesive. As illustrated in thecross-section view of FIG. 10, a through mortise hole 50 is boredthrough the silicon base 32. Upper and lower chamfers 52, 54 aremachined into the base at the opposed ends of the mortise hole 50. Asillustrated in FIG. 11, the silicon leg 36 is inserted through themortise hole 50 with a gap 56 being left between the leg 36 and the base50. The axial position of an axial face 58 of the leg 36 should be neara planar bottom surface 60 of the base 50, but may be somewhat above orbelow it. The final position, whether above or below, may depend uponthe final alignment. As illustrated in FIG. 12, a silicon collar 64 isplasma sprayed on one side of the base 32 to fill the upper chamfer 52and to bond the base 32 to the sides of the leg 36. A silicon cap 66 isplasma sprayed on the other side of the base to cover the axial face 58and side portions of the leg 36, to fill the lower chamfer 54, andplanar portions of the bottom surface 60 of the base 32.

The two plasma sprayed layers 64, 66 bond portions of the leg 36 atopposite ends of the mortise hole 50, thereby providing a strong jointwithout the need for any adhesive. However, if desired, adhesive may beapplied to the parts prior to assembly to fill the gap 56. Theadditional adhesive is particularly useful if the structure is to beused inside a vacuum chamber to prevent a virtual leak through theplasma sprayed silicon, which may be somewhat porous.

If desired, further machining smoothes the surfaces, as illustrated inFIG. 13. The collar 64 may be ground to form a shaped collar 82 barelyprotruding above the chamfer 52. The silicon cap 66 and possibly the endof the leg 36 may be ground smooth to form a bottom collar 80. If thebottom leg face 58 of FIG. 12 is recessed in back of the bottom basesurface 60, then after grinding a portion of the silicon cap 66 extendsacross the center of the bottom collar 80. The smooth bottom surface isespecially desirable on the lower base to provide a smooth supportsurface.

Temporary silicon tacks may be plasma sprayed on one end of the throughmortise hole 50 to allow early removal of the tower from the alignmentjig. Only one tack is required for each mortise hole 50.

The invention, as previously mentioned, may be applied to siliconstructures other than wafer support towers. It is particularlyadvantageous in forming large silicon rings. One such ring is a shadowring 90, illustrated in cross section in FIG. 14. The shadow ring 90 isdisposed around a silicon wafer to protect its edge from being sputterbonded to the pedestal supporting the wafer and also to protect thepedestal from being coated. It has a somewhat complex annular shape witha ledge portion 92 barely overhanging the periphery of the wafer. Afirst downward projection 94 supports the shadow ring 90 on thepedestal. A second downward projection 96 acts both as a baffle and tosupport the shadow ring 90 off the pedestal during wafer transfer. Forsputtering onto 300 mm wafers, the shadow ring 90 may have a diameter ofup to 450 mm. Silicon is a preferred material for the shadow ring 90because of its low contamination and its identical coefficient ofthermal expansion with the silicon wafer, which it may contact. Largeblanks of silicon are available to form an integral shadow ring, butthey are very expensive, and a large amount of the silicon is wastedwhen the central aperture is machined from a unitary blank.

The invention allows the easy fabrication of large silicon rings from anumber of much smaller silicon segments bonded together in a circle. Asingly chamfered segment 100 is illustrated orthographically in FIG. 15.It is a generally rectangular member having a top surface 102 and anunillustrated parallel bottom surface, an inner surface 104 and anunillustrated parallel bottom surface, and perpendicular thereto aninner surface 104 and an unillustrated back surface. However, the memberhas a first flat end surface 106 and a second flat end surface 108 whichare offset from each other with respect to a ring radius and at leastone of which is non-perpendicular to the front surface 104. The amountof angular offset depends upon the number N of such segments 100 used toform the ring. In general, the offset is 360°/N. Further, a first upperchamfer 110 is machined between the first end surface 106 and the topsurface 102 and a yet unillustrated first bottom chamfer is machinedbetween the first end surface 106 and the bottom surface. Similarly, asecond upper chamfer 112 and as yet unillustrated second bottom chamferare cut at the other axial end of the segment 100 adjacent the secondend surface 108.

A doubly chamfered segment 114 illustrated in FIG. 16 additionally has afirst inner chamfer 116 and a corresponding outer chamfer machinedbetween the first end surface 106 and the inner surface 104 and theouter surface respectively. Similarly, a second inner chamfer 118 and acorresponding outer chamfer are machined between the second end surface108 and the front surface 104 and the back surface respectively. Theouter chamfers may be eliminated if the segment 114 is latercircularized since they would be likely ground away during the circularmachining.

The fabrication of the ring will be described with the use of the singlychamfered segment 100, but nearly the same process may be used with thedoubly chamfered segment 102. As illustrated in plan view in FIG. 17 andin a radially outward elevation in FIG. 18, N segments 102, only twosegments 100 a, 100 b being illustrated, are arranged and aligned in ajig to form a closed circle with the first end surface 106 of onesegment 100 b abutting the second end surface 108 of the adjacentsegment 100 a. Although the ring may be formed of any plural integralnumber of segments, at least four and more preferably at least sixsegments reduce the amount of wasted silicon. The upper chamfers 110,112 form a V-shaped depression on one side of the ring, and the lowerchamfers 120, 122 form another V-shaped depression on the other side ofthe ring.

As illustrated in plan view of FIG. 19 and in radially outward view inFIG. 20, a top silicon layer 124 is plasma sprayed on the top of thering at the joint between the two segments 100 a, 100 b to fill the topchamfers 110, 112 and to contact planar portions of the top surface 102.Similarly, a bottom silicon layer 126 layer 126 is plasma sprayed on thebottom of the ring to fill the bottom chamfers 120, 122 and to contactplanar portions of the bottom surface. Thereby, the two silicon layers124, 126 bond to the two segments 100 a, 100 b and permanently fix themtogether. Similar, silicon layers are plasma sprayed at the other N-1joints to form a polygonal ring 128 illustrated in plan view in FIG. 21arranged around a central axis and having an aperture extending alongthat axis. The silicon layers 124, 126 can be ground to flatten the topand bottom surfaces of the ring. However, the smoothing can be combinedwith the machining required to circularize the ring and produce thedesired cross section, such as the shadow ring 90 of FIG. 14. Thecircularization and wastage of silicon can be minimized if the segments100 are cut from the silicon blanks as arcs having a curvature equal tothat of the desired ring.

Optionally, adhesive may be applied between the end faces 108, 106before assembly and cured prior to final silicon plasma spraying. If thering 90 is to be used in a vacuum chamber, the adhesive reduces thevirtual leakage from the small joint void between the silicon layers124, 126A but exposed on the inner and outer sides.

Other types of silicon rings, such as clamp rings, plasma rings, sliprings for supporting wafer in rapid thermal processing (RTP), andpedestal rims can be formed in similar fashion.

Similar techniques can be used to form large tubular bodies, such asfurnace and reactor liners and reactor vacuum chamber walls by the useof barrel staves. Boyle et al. describe the stave technique in theaforementioned patent, but using SOG adhesive as the primary bondingagent. A stave 130 illustrated in axial cross-section in FIG. 22 ismachined to be shaped as a generally truncated wedge extending asubstantial distance perpendicular to the plane of the illustration. Thestave 130 has an inner face 132 and a parallel outer face 134. First andsecond side faces 136, 138 are offset from each other and at least oneof them is not perpendicular to the inner and outer faces 132, 134.Inner chamfers 140, 142 are machined between the inner face 132 and therespective side face 136, 138. Similarly outer chamfers 144, 146 aremachined between the outer face 134 and the respective side face 136,138. Optionally to facilitate alignment, a tongue 143 is machined in thefirst side face 136 and a corresponding groove 144 is machined in thesecond side face 138. All these features preferably extend axially alongthe substantial axial length of the stave 130, which corresponds to thelength of the final tube. The chamfers 140, 142 of the stave 130corresponds to the chamfers 116, 118 of the doubly chamfered segment 114of FIG. 16, and the stave 130 has much less need for the segment'schamfers 110, 112.

The angular offset between the two side faces 136, 138 depends on thenumber N of staves 130 used to form a closed ring. A jig aligns the Nstaves 130 side by side in a circle. Two such staves 130 a, 130 b,though lacking the tongue and groove, are illustrated in the axialcross-sectional view of FIG. 23 and the outwardly radial elevation ofFIG. 24 with the first side face 136 of one stave 130 b abutting thesecond side face 138 of the other stave 130 a. As shown in the axialcross-sectional view of FIG. 25 and outwardly radial elevation of FIG.26, plasma spraying is used to deposit an axially extending innersilicon layer 150 filling the inner chamfers 140, 142 and acorresponding axially extending outer silicon layer 152 filling theouter chamfers 146, 148. If tacks are used, two tacks should bedeposited on opposed axial ends of each joint. A resultant polygonaltube 154 is illustrated in axial cross section in FIG. 27 arrangedaround a central axis with an aperture including that axis. The innerand outer surfaces may be circularized or otherwise smoothed dependingupon the need. If the tube 154 is to be used as a vacuum wall, adhesiveshould be applied between the staves 130 and cured prior to the finalplasma spraying. If desired, a substantial thickness of silicon can beplasma sprayed on either the inner surface or the outer surface or bothto form continuous layers of plasma sprayed silicon, which maythereafter be circularized.

The invention can be used not only to fabricate silicon structures butalso to repair a silicon member, even if already assembled into acomplex structure. The tower 10 illustrated in FIG. 1 requiresconsiderable expense in its fabrication. Particularly the leg 12 areexpensive to machine because silicon is a brittle refractory materialrather than a ductile metal and its machining is better characterized asgrinding in which numerous small cuts are required to form each of theslots. On occasion, when the tower or boat is used for processingwafers, after repetitive temperature cycling in an annealing, a crack160, illustrated in the orthographic view of FIG. 28, develops in asilicon member 162 forming part of the tower. Such cracks seem to arisemost often in the bases. Usually, they appear to originate from a cornerbetween two faces 164, 166 of the member 162. They appear to propagate ashort distance along those two faces 164, 166 and then stop growing.Their cause is not clear, and towers have been successfully used evenafter a few such cracks 160 have developed. Nonetheless, cracks presenta source of contamination. Further, there is a fear that on continueduse, the cracks will expand or join to such an extent that the towerwill shatter in the middle of a processing run, inevitably destroyingvaluable wafers. Similar surface defects are small shallow chips thatare formed either at the corners on in planar surfaces.

By use of plasma spraying, the crack 160 can be repaired, and the toweror other structure can be returned to service. The same technique may beused to repair chips. As illustrated in FIG. 29, the member 162 ismachined in the area of the crack 160 to form a more regular hole 168with a more open aspect ratio, preferably with sloping sides. A millingmachine or a drill can be used for the machining. Alternatively, aDremel tool can be manually operated to perform the limited amount ofmachining required. As illustrated in the orthographic view of FIG. 30,silicon is plasma sprayed on both of the faces 164, 166 to form acontinuous silicon layer 170 that fills the machined hole 168 andextends above the original surfaces surrounding the hole 168. Ifdesired, as illustrated in FIG. 31, both faces 164, 166 may be groundsmooth to restrict the silicon layer 170 to the volume of machined hole168 to form a planarized silicon layer 172 with perpendicular facesflush with the two member faces 164, 166. The same general procedure isfollowed if the crack 160 appears in only one face of the siliconmembers with the processing limited to that face. If the crack 160 isnot too close to other members of the assembled structure, the repaircan be performed without disassembling the structure. Further, there maybe situations when an unassembled silicon member requires crack repair.

The silicon tower 10 of FIG. 1 currently includes members composed oftwo types of silicon. The legs 12 are composed of virgin polysilicon,which exhibits an extraordinarily high pure level, thereby reducingcontamination of the wafer 22 supported on the legs' teeth 16 duringhigh temperature processing. Machining of virgin polysilicon may requirethe pre-annealing described by Boyle et al. in the aforesaid patent. Thebases 14, on the other hand, are presently composed of Czochralski orcast polysilicon since the required large silicon blanks are notpresently available in virgin polysilicon. Czochralski silicon iscommercially available in ingots of diameters of up to 300 mm and forspecialty use sometimes larger. Alternatively, plasma spraying of theinvention may be used to bond together several relatively narrowrectangular plates of virgin polysilicon, which are thereafter machinedinto the desired shape for a base.

The plasma spraying of the invention can used to join any combination oftypes of silicon. Other types of silicon are available, for example,monocrystalline Czochralski silicon or cast or extruded silicon, thelatter being particularly available in thin flat sheets. The mostprevalent type of plasma spraying of silicon uses a silicon powder, forexample having diameters in the range of 15 to 45 μm, which is entrainedin the plasma and there liquified. Silicon powder is commerciallyavailable from Cerac having at least six 9s purity. Virgin polysiliconpowder of significantly higher purity is obtainable from MEMC, but suchpurity may not be needed for parts away from wafer support areas inhigh-temperature processing. Even though the invention is particularlyuseful for joining silicon structures with a silicon bond, all of veryhigh purity, the invention is not so limited and may be applied tosilicon of lesser purity. For purposes of the invention, silicon unlessspecified otherwise is understood to include no more than 1 wt % ofintentional or unintentional dopants or other contaminants andimpurities.

Plasma spraying as that term is used in this invention uses a plasma orother high-temperature arc to cause a material typically in powder forminjected into the plasma to at least be liquified and possiblyvaporized. Resultant liquid drops or confined material vapor aredirected toward the workpiece to be plasma sprayed. The material fluid,whether liquid drops or vapor, strikes the workpiece and immediatelycools and turns to solid form on the substrate surface, thereby coatingthe workpiece. Typically the powder is entrained in an argon flow thatis excited into a plasma adjacent the spray nozzle. Plasma sprayingdiffers from arc welding or cutting in which the very high-temperatureplasma arc extends to the workpiece and causes the workpiece material tomelt. Typically, the workpiece is grounded to form one of the electrodesfor the welding arc. In contrast, plasma spraying may be performed as alow-temperature operation in which the bulk of the workpiece ismaintained at a temperature of no more than 200° C. although there maybe situations where the workpiece is held at a temperature up to 500° C.It is possible to use a solid wire inserted into the plasma or arc asthe material source. However, this still differs from arc welding with afiller in that the rod and workpiece do not form a common melt.Typically, to prevent the material fluid and condensed vapor from beingoxidized, the main spray jet is enclosed in a coaxial shroud of inactivegas.

Although the low workpiece temperature afforded by plasma spraying isone of its advantages, the welding work of Zehavi et al. in the abovecited patents showed that cracks were avoided during welding bymaintaining the silicon workpieces at a temperature of at least 600° andeven 800° C. There may be some situations where plasma spraying ofsilicon would benefit from workpiece temperatures above 600° C.

Other deposition methods may be used to deposit the silicon layerbonding the two members. However, plasma spraying is a flexible, easilyused process that can be performed in the environment of a machine shop.

Plasma spraying to join silicon parts in the configuration of a towerhas been demonstrated by A & A Company of South Plainfield, N.J. at thedirection of the inventors. Ionic Fusion Corporation of Longmont, Colo.also performs low-temperature plasma spraying. Plasma spray torches arecommercially available from Northwest Mettech of British Columbia. Theirnozzles contain both the anode and cathode for the plasma.

The surface of the silicon workpieces to be plasma sprayed should berelatively free of oxide or other contaminants but the native oxide onsilicon is too thin to cause problems. Preferably, the workpieces arecleaned beforehand. Adhesion of the sprayed silicon to the siliconworkpieces can be improved by bead blasting the workpieces beforehandwith, for example, high purity quartz, to produce work damage in thesilicon in the form of pits and cracks. This form of microscopicroughening increases the adhesion of the deposited silicon layer.

Low-temperature plasma sprayed silicon can be visually identified.First, if the sprayed silicon layer and the silicon substrate aresectioned, a distinct seam separates the two silicon portions. Under ahigh-power optical microscope, the plasma sprayed silicon appears tohave a speckled surface resembling the skin of an orange peel. Suchstructure is emphasized by treating the surface with Sirtl, a mix ofhydrofluoric, nitric, and acetic acids with the possible addition ofcopper. In contrast, Czochralski polysilicon shows a structure ofnominally aligned microcrystallites, cast polysilicon shows a moreragged structure of randomly oriented crystallites having a size ofabout 3 to 6 mm, virgin polysilicon shows a dendritic polycrystallinestructure propagating from the growth seed, and Czochralskimonocrystalline silicon appears like a mirror.

The invention thus allows silicon parts, particularly those of very highpurity, to be joined to form a structure having high strength butexhibiting very low impurity levels. The method uses commonly availablematerials and is easily and economically practiced.

1. A silicon structure, comprising: a first silicon part having a bulkportion consisting essentially of silicon; a second silicon part havinga bulk portion consisting essentially of silicon and disposed adjacentto the first silicon part along a seam; and a layer of silicon bonded toboth of the first and second silicon parts at portions thereof away fromthe seam and bridging over an external edge of the seam, wherein thefirst and second silicon parts are both capable of being free-standingif not bonded together by the layer of silicon.
 2. The silicon structureof claim 1, wherein the layer of silicon is localized on the first andsecond silicon parts to areas thereof adjacent the seam.
 3. The siliconstructure of claim 1, wherein the layer of silicon comprises a layer ofplasma sprayed silicon.
 4. The silicon structure of claim 1, whereineach of the first and second parts comprises silicon selected from thegroup consisting of virgin polysilicon, Czochralski monocrystallinesilicon, Czochralski polysilicon, and cast polysilicon.
 5. The siliconstructure of claim 1, wherein principal surfaces of the first and secondsilicon pails extend perpendicularly to each other at the seam.
 6. Asilicon substrate support fixture, comprising: first and second siliconbases each having mortise holes formed therein; a plurality of legscomprising virgin polysilicon, having teeth cut therein for supporting aplurality of substrates in parallel relationship, and inserted into themortise holes to form respective seams between respective pairs of thebases and the legs; and layers of silicon bonded to portions of thebases and legs away from respective ones of the seams and bridging overexternal edges of respective ones of the seams to join the legs to thebases, wherein the layers of silicon are bonded to only localized areasof the bases and legs adjacent the seams.
 7. The fixture of claim 6,wherein the bases and legs are not otherwise bonded to each other. 8.The fixture of claim 6, wherein the base and legs are also bonded toeach other by an adhesive.
 9. The fixture of claim 6, wherein the layersof silicon comprise layers of plasma sprayed silicon.
 10. The fixture ofclaim 6, wherein each of the bases comprises silicon selected from thegroup consisting of virgin polysilicon, Czochralski monocrystallinesilicon, Czochralski polysilicon, and cast polysilicon.
 11. The fixtureof claim 6, wherein the mortise holes pass through the bases and thelayers of silicon are disposed on both sides of the bases for each ofthe mortise holes.
 12. A silicon structure, comprising: a first siliconpart; a second silicon part disposed adjacent to the first silicon partalong a seam; and a layer of silicon bonded to both of the first andsecond silicon parts in portions thereof away from the seam and bridgingover an external edge of the seam; wherein the structure is formed bythe method of juxtaposing the two silicon parts to form the seamtherebetween and plasma spraying silicon onto the silicon parts andacross the seam to form the layer of silicon and to thereby join the twosilicon parts.
 13. The silicon structure of claim 12, wherein the twosilicon parts are not joined together prior to the plasma spraying. 14.The silicon structure of claim 12, wherein the two silicon parts arealso joined together by an adhesive.
 15. The silicon structure of claim12 comprising two silicon bases including a first one of the siliconparts and at least three silicon legs including a second one of thesilicon parts and having teeth formed therein to support a plurality ofsubstrates in parallel relationship.
 16. The silicon structure of claim12, comprising a plurality of silicon staves including the silicon partsand arranged in a closed pattern to form a tubular member.
 17. Thesilicon structure of claim 16, wherein seams between the silicon stavesare covered with plasma sprayed silicon.
 18. The silicon structure ofclaim 16, wherein an adhesive disposed in the seams join the siliconstaves together.
 19. The structure of claim 12, wherein the layers ofsilicon are formed by plasma spraying including entraining siliconpowder in a plasma of the plasma spraying.